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DATA SHEET
1GB DDR2 SDRAM SO-DIMM
EBE11UE6ACSA (128M words x 64 bits, 2 Ranks)
Specifications
* Density: 1GB * Organization 128M words x 64 bits, 2 ranks * Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA * Package: 200-pin socket type small outline dual in line memory module (SO-DIMM) PCB height: 30.0mm Lead pitch: 0.6mm Lead-free (RoHS compliant) * Power supply: VDD = 1.8V 0.1V * Data rate: 800Mbps/667Mbps (max.) * Eight internal banks for concurrent operation (components) * Interface: SSTL_18 * Burst lengths (BL): 4, 8 * /CAS Latency (CL): 3, 4, 5, 6 * Precharge: auto precharge option for each burst access * Refresh: auto-refresh, self-refresh * Refresh cycles: 8192 cycles/64ms Average refresh period 7.8s at 0C TC +85C 3.9s at +85C < TC +95C * Operating case temperature range TC = 0C to +95C
Features
* Double-data-rate architecture; two data transfers per clock cycle * The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture * Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver * DQS is edge-aligned with data for READs; centeraligned with data for WRITEs * Differential clock inputs (CK and /CK) * DLL aligns DQ and DQS transitions with CK transitions * Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS * Data mask (DM) for write data * Posted CAS by programmable additive latency for better command and data bus efficiency * Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality * /DQS can be disabled for single-ended Data Strobe operation
Document No. E1045E20 (Ver. 2.0) Date Published December 2007 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2007
EBE11UE6ACSA
Ordering Information
Data rate Mbps (max.) 800 Component JEDEC speed bin (CL-tRCD-tRP) DDR2-800 (5-5-5) DDR2-800 (6-6-6) 200-pin SO-DIMM Gold (lead-free) Contact pad
Part number EBE11UE6ACSA-8E-E EBE11UE6ACSA-8G-E
Package
Mounted devices EDE1116ACSE-8E-E EDE1116ACSE-8E-E EDE1116ACSE-8E-E EDE1116ACSE-6E-E
EBE11UE6ACSA-6E-E
667
DDR2-667 (5-5-5)
Pin Configurations
Front side 1 pin 39 pin 41 pin 199 pin
2 pin
40 pin 42 pin Back side
200 pin
Front side Pin No. 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 Pin name VREF VSS DQ0 DQ1 VSS /DQS0 DQS0 VSS DQ2 DQ3 VSS DQ8 DQ9 VSS /DQS1 DQS1 VSS DQ10 DQ11 VSS VSS DQ16 DQ17 Pin No. 51 53 55 57 59 61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 Pin name DQS2 VSS DQ18 DQ19 VSS DQ24 DQ25 VSS DM3 NC VSS DQ26 DQ27 VSS CKE0 VDD NC BA2 VDD A12 A9 A8 VDD
Back side Pin No. 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 Pin name VSS DQ4 DQ5 VSS DM0 VSS DQ6 DQ7 VSS DQ12 DQ13 VSS DM1 VSS CK0 /CK0 VSS DQ14 DQ15 VSS VSS DQ20 DQ21 Pin No. 52 54 56 58 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 Pin name DM2 VSS DQ22 DQ23 VSS DQ28 DQ29 VSS /DQS3 DQS3 VSS DQ30 DQ31 VSS CKE1 VDD NC NC VDD A11 A7 A6 VDD
Data Sheet E1045E20 (Ver. 2.0)
2
EBE11UE6ACSA
Front side Pin No. 47 49 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143 145 147 149 Pin name VSS /DQS2 A1 VDD A10/AP BA0 /WE VDD /CAS /CS1 VDD ODT1 VSS DQ32 DQ33 VSS /DQS4 DQS4 VSS DQ34 DQ35 VSS DQ40 DQ41 VSS DM5 VSS Pin No. 97 99 151 153 155 157 159 161 163 165 167 169 171 173 175 177 179 181 183 185 187 189 191 193 195 197 199 Pin name A5 A3 DQ42 DQ43 VSS DQ48 DQ49 VSS NC VSS /DQS6 DQS6 VSS DQ50 DQ51 VSS DQ56 DQ57 VSS DM7 VSS DQ58 DQ59 VSS SDA SCL VDDSPD Back side Pin No. 48 50 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144 146 148 150 Pin name VSS NC A0 VDD BA1 /RAS /CS0 VDD ODT0 NC VDD NC VSS DQ36 DQ37 VSS DM4 VSS DQ38 DQ39 VSS DQ44 DQ45 VSS /DQS5 DQS5 VSS Pin No. 98 100 152 154 156 158 160 162 164 166 168 170 172 174 176 178 180 182 184 186 188 190 192 194 196 198 200 Pin name A4 A2 DQ46 DQ47 VSS DQ52 DQ53 VSS CK1 /CK1 VSS DM6 VSS DQ54 DQ55 VSS DQ60 DQ61 VSS /DQS7 DQS7 VSS DQ62 DQ63 VSS SA0 SA1
Data Sheet E1045E20 (Ver. 2.0)
3
EBE11UE6ACSA
Pin Description
Pin name A0 to A12 A10 (AP) BA0, BA1, BA2 DQ0 to DQ63 /RAS /CAS /WE /CS0, /CS1 CKE0, CKE1 CK0, CK1 /CK0, /CK1 DQS0 to DQS7, /DQS0 to /DQS7 DM0 to DM7 SCL SDA SA0, SA1 VDD VDDSPD VREF VSS ODT0, ODT1 NC Function Address input Row address Column address Auto precharge Bank select address Data input/output Row address strobe command Column address strobe command Write enable Chip select Clock enable Clock input Differential clock input Input and output data strobe Input mask Clock input for serial PD Data input/output for serial PD Serial address input Power for internal circuit Power for serial EEPROM Input reference voltage Ground ODT control No connection A0 to A12 A0 to A9
Data Sheet E1045E20 (Ver. 2.0)
4
EBE11UE6ACSA
Serial PD Matrix
Byte No. Function described 0 1 2 3 4 5 6 7 8 9 Number of bytes utilized by module manufacturer Total number of bytes in serial PD device Memory type Number of row address Number of column address Number of DIMM ranks Module data width Module data width continuation DDR SDRAM cycle time, CL = X -8E (CL = 5) -8G (CL = 6) -6E (CL = 5) 10 SDRAM access from clock (tAC) -8E, -8G -6E 11 12 13 14 15 16 17 18 DIMM configuration type Refresh rate/type Primary SDRAM width Error checking SDRAM width Reserved SDRAM device attributes: Burst length supported SDRAM device attributes: Number of banks on SDRAM device SDRAM device attributes: /CAS latency -8E, -6E -8G 19 20 21 22 23 DIMM Mechanical Characteristics DIMM type information SDRAM module attributes SDRAM device attributes: General Minimum clock cycle time at CL = X - 1 -8E, -6E (CL = 4) -8G (CL = 5) 24 Maximum data access time (tAC) from clock at CL = X - 1 -8E, -6E (CL = 4) -8G (CL = 5) 25 Minimum clock cycle time at CL = X - 2 -8E, -6E (CL = 3) -8G (CL = 4) Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value 1 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 1 1 1 0 0 0 0 0 0 1 0 0 0 1 1 1 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 1 1 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 1 0 0 0 0 1 1 0 0 0 0 1 1 1 0 1 1 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 0 0 1 0 0 0 0 1 0 0 0 1 0 0 0 0 1 1 1 0 0 1 0 0 0 0 0 1 0 0 0 0 1 0 0 1 0 0 1 0 1 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 0 0 0 0 0 0 0 0 1 0 0 1 1 0 0 1 0 1 80H 08H 08H 0DH 0AH 61H 40H 00H 05H 25H 25H 30H 40H 45H 00H 82H 10H 00H 00H 0CH 08H 38H 70H 01H 04H 00H 03H 3DH 30H 50H 45H 50H 3DH Comments 128 bytes 256 bytes DDR2 SDRAM 13 10 2 64 0 SSTL 1.8V 2.5ns* 2.5ns* 3.0ns* 0.4ns*
1
Voltage interface level of this assembly 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
1 1
1
0.45ns* None. 7.8s x 16 None. 0 4,8 8 3, 4, 5 4, 5, 6
1
3.80mm max. SO-DIMM Normal Weak Driver 50 ODT Support 3.75ns* 3.0ns* 0.5ns*
1 1
1
0.45ns* 5.0ns*
1
1
3.75ns*
1
Data Sheet E1045E20 (Ver. 2.0)
5
EBE11UE6ACSA
Byte No. 26
Function described Maximum data access time (tAC) from clock at CL = X - 2 -8E, -6E (CL = 3) -8G (CL = 4) Minimum row precharge time (tRP) -8E -8G, -6E
Bit7 0 0 0 0
Bit6 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0
Bit5 1 0 1 1 1 1 1 1 0 0 1 1 1 0 0 0 0 1 0 0 0 1 0 1 1 1 0 0 0 0 1 0
Bit4 0 1 1 1 0 1 1 0 0 1 0 0 0 0 1 1 1 1 1 1 0 1 0 1 1 1 0 1 1 1 0 0
Bit3 0 0 0 1 1 0 1 1 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 1 1 1 0 0 1 1 0 0
Bit2 0 0 0 1 0 0 1 1 0 1 0 1 1 1 0 0 1 1 1 1 0 1 1 0 1 1 0 1 0 1 0 0
Bit1 0 0 1 0 0 1 0 0 0 1 0 0 1 0 0 1 1 0 1 1 0 1 1 0 0 1 0 0 0 1 1 0
Bit0 0 0 0 0 0 0 0 1 0 1 0 1 1 1 0 0 1 0 0 0 0 0 0 1 0 1 0 0 0 0 0 0
Hex value Comments 60H 50H 32H 3CH 28H 32H 3CH 2DH 80H 17H 20H 25H 27H 05H 10H 12H 17H 3CH 1EH 1EH 00H 36H 06H 39H 3CH 7FH 80H 14H 18H 1EH 22H 00H 57.5ns* 60ns*
1 1
0.6ns* 0.5ns*
1
1
27
12.5ns 15ns 10ns 12.5ns 15ns 45ns 512M bytes 0.17ns* 0.20ns* 0.25ns* 0.27ns* 0.05ns* 0.10ns* 0.12ns* 0.17ns* 15ns*
1 1
28 29
Minimum row active to row active 0 delay (tRRD) Minimum /RAS to /CAS delay (tRCD) 0 -8E -8G, -6E 0 0 1 0 0 0 0 0 0 Minimum active to precharge time (tRAS) Module rank density Address and command setup time before clock (tIS) -8E, -8G -6E Address and command hold time after clock (tIH) -8E, -8G -6E Data input setup time before clock (tDS) -8E, -8G -6E
30 31 32
1
33
1
1
34
1
1
35
Data input hold time after clock (tDH) 0 -8E, -8G -6E 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 Write recovery time (tWR) Internal write to read command delay (tWTR) Internal read to precharge command delay (tRTP) Memory analysis probe characteristics Extension of Byte 41 and 42 -8E -8G, -6E Active command period (tRC) -8E -8G, -6E Auto refresh to active/ Auto refresh command cycle (tRFC) SDRAM tCK cycle max. (tCK max.) Dout to DQS skew -8E, -8G -6E Data hold skew (tQHS) -8E, -8G -6E PLL relock time
1
1
36 37 38 39 40
7.5ns* 7.5ns* TBD
1
1
41
42 43 44
127.5ns* 8ns*
1
1
0.20ns* 0.24ns* 0.30ns* 0.34ns*
1
1
45
1
1
46
Undefined
Data Sheet E1045E20 (Ver. 2.0)
6
EBE11UE6ACSA
Byte No. 47 to 61 62 63
Function described
Bit7 0
Bit6 0 0 0 1 0 1 1 0 x 1 1 1 0 0 1 1 0 1 1 1 1 0 0 0 1 1 0 1 0 0 0 x x
Bit5 0 0 0 1 1 1 1 0 x 0 0 0 1 1 0 0 1 0 0 0 0 1 1 1 0 0 1 0 1 1 1 x x
Bit4 0 1 0 0 0 1 1 0 x 0 0 0 1 1 1 0 1 0 0 1 0 0 1 1 0 0 0 0 0 1 0 x x
Bit3 0 0 1 1 0 1 1 0 x 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 1 0 0 0 0 x x
Bit2 0 0 0 1 1 1 1 0 x 1 0 1 1 0 1 1 1 0 0 0 0 1 0 1 1 1 1 1 0 0 0 x x
Bit1 0 1 1 1 0 1 1 0 x 0 1 0 0 0 0 0 1 0 1 1 0 0 0 1 0 1 0 0 0 0 0 x x
Bit0 0 0 1 1 1 1 0 0 x 1 0 1 1 1 1 1 0 1 1 1 1 1 0 0 1 1 1 1 0 0 0 x x
Hex value 00H 12H 8BH 6FH A5H 7FH FEH 00H xx 45H 42H 45H 31H 31H 55H 45H 36H 41H 43H 53H 41H 2DH 38H 36H 45H 47H 2DH 45H 20H 30H 20H xx xx
Comments
SPD Revision Checksum for bytes 0 to 62 -8E -8G -6E
0 1 0 1 0 1 0 x 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 x x
Rev. 1.2
64 to 65 66 67 to 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
Manufacturer's JEDEC ID code Manufacturer's JEDEC ID code Manufacturer's JEDEC ID code Manufacturing location Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number Module part number -8E, -8G -6E Module part number -8E, -6E -8G Module part number Module part number Module part number Revision code Revision code Manufacturing date Manufacturing date Module serial number Manufacture specific data
Continuation code Elpida Memory (ASCII-8bit code) E B E 1 1 U E 6 A C S A -- 8 6 E G -- E (Space) Initial (Space) Year code (BCD) Week code (BCD)
87
88 89 90 91 92 93 94 95 to 98 99 to 127
Note: These specifications are defined based on component specification, not module.
Data Sheet E1045E20 (Ver. 2.0)
7
EBE11UE6ACSA
Block Diagram
ODT1 ODT0
RS2
RS2
CKE1 CKE0
RS2
RS2
/CS1 /CS0
/DQS0
RS2
RS2
RS1
/CS CKE ODT /LDQS
LDQS
/CS CKE ODT /LDQS
RS1
/DQS4
RS1
/CS CKE ODT /LDQS
/CS CKE ODT /LDQS
RS1
DQS0
LDQS LDM I/O0 to I/O7
DQS4
RS1
LDQS LDM
LDQS LDM
DM0
DQ0 to DQ7
/DQS1
RS1
LDM I/O0 to I/O7
/UDQS
DM4
8 RS1
8 RS1
RS1
DQ32 to DQ39
D0
/UDQS
D4
RS1
I/O0 to I/O7
/UDQS
/DQS5
RS1
D2
I/O0 to I/O7
/UDQS
D6
RS1
DQS1
UDQS UDM I/O8 to I/O15
UDQS UDM I/O8 to I/O15
DQS5
RS1
UDQS UDM
UDQS UDM I/O8 to I/O15
DM1
DQ8 to DQ15
RS1
DM5
8 RS1
8 RS1
DQ40 to DQ47
I/O8 to I/O15
RS1
/DQS2
RS1
/CS CKE ODT /LDQS
/CS CKE ODT /LDQS
RS1
/DQS6
RS1
/CS CKE ODT /LDQS
/CS CKE ODT /LDQS
DQS2
RS1
LDQS LDM
LDQS LDM I/O0 to I/O7
DQS6
RS1
LDQS LDM
LDQS
LDM I/O0 to I/O7
DM2
8 RS1
DM6
DQ48 to DQ55
8 RS1
DQ16 to DQ23
RS1
I/O0 to I/O7
/UDQS
RS1 RS1
I/O0 to I/O7
RS1
/DQS3
D1
/UDQS
D5
/DQS7
/UDQS
RS1 RS1
D3
/UDQS
D7
DQS3
UDQS UDM I/O8 to I/O15
UDQS UDM I/O8 to I/O15
DQS7
UDQS UDM
UDQS
UDM I/O8 to I/O15
DM3
8 RS1
DM7
8 RS1
DQ24 to DQ31
DQ56 to DQ63
I/O8 to I/O15
BA0 to BA2
A0 to A12 /RAS /CAS /WE
CK0 /CK0
CK1 /CK1
RS2
BA0 to BA2: SDRAMs (D0 to D7)
RS2
Serial PD
SCL
SA0
SA1
SCL SDA
A0 to A12: SDRAMs (D0 to D7)
RS2
RS2
RS2
SDA
/RAS: SDRAMs (D0 to D7)
/CAS: SDRAMs (D0 to D7)
/WE: SDRAMs (D0 to D7)
4 loads
4 loads
A0
A1 A2
U0
WP
Notes : 1. DQ wiring may be changed within a byte.
VDDSPD VREF
VDD
VSS
* D0 to D7 : 1G bits DDR2 SDRAM U0 : 2k bits EEPROM Rs1 : 22 Rs2 : 3.0
SPD
SDRAMs (D0 to D7)
SDRAMs (D0 to D7) VDD and VDDQ
SDRAMs (D0 to D7) SPD
2. DQ, DQS, /DQS, ODT, DM, CKE, /CS relationships must be meintained as shown.
Data Sheet E1045E20 (Ver. 2.0)
8
EBE11UE6ACSA
Electrical Specifications
* All voltages are referenced to VSS (GND). Absolute Maximum Ratings
Parameter Voltage on any pin relative to VSS Supply voltage relative to VSS Short circuit output current Power dissipation Operating case temperature Storage temperature Symbol VT VDD IOS PD TC Tstg Value -0.5 to +2.3 -0.5 to +2.3 50 4 0 to +95 -55 to +100 Unit V V mA W C C 1, 2 1 1 Notes 1
Notes: 1. DDR2 SDRAM component specification. 2. Supporting 0C to +85C and being able to extend to +95C with doubling auto-refresh commands in frequency to a 32ms period (tREFI = 3.9s) and higher temperature self-refresh entry via the control of EMRS (2) bit A7 is required. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
DC Operating Conditions (TC = 0C to +85C) (DDR2 SDRAM Component Specification)
Parameter Supply voltage Symbol VDD, VDDQ VSS VDDSPD Input reference voltage Termination voltage DC input logic high DC input low AC input logic high AC input low VREF VTT VIH (DC) VIL (DC) VIH (AC) VIL (AC) min. 1.7 0 1.7 0.49 x VDDQ VREF - 0.04 VREF + 0.125 -0.3 VREF + 0.200 typ. 1.8 0 -- VREF max. 1.9 0 3.6 VREF + 0.04 VDDQ + 0.3 VREF - 0.125 VREF - 0.200 Unit V V V V V V V V V 1, 2 3 Notes 4
0.50 x VDDQ 0.51 x VDDQ
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF are expected to track variations in VDDQ. 2. Peak to peak AC noise on VREF may not exceed 2% VREF (DC). 3. VTT of transmitting device must track VREF of receiving device. 4. VDDQ must be equal to VDD.
Data Sheet E1045E20 (Ver. 2.0)
9
EBE11UE6ACSA
AC Overshoot/Undershoot Specification (DDR2 SDRAM Component Specification)
Parameter Maximum peak amplitude allowed for overshoot Maximum peak amplitude allowed for undershoot Maximum overshoot area above VDD DDR2-800 DDR2-667 Maximum undershoot area below VSS DDR2-800 DDR2-667 Maximum peak amplitude allowed for overshoot Maximum peak amplitude allowed for undershoot Maximum overshoot area above VDD Maximum undershoot area below VSS Maximum peak amplitude allowed for overshoot Maximum peak amplitude allowed for undershoot Maximum overshoot area above VDDQ Maximum undershoot area below VSSQ DQ, DQS, /DQS, UDQS, /UDQS, LDQS, /LDQS, RDQS, /RDQS, DM, UDM, LDM CK, /CK Pins Command, Address, CKE, ODT Specification 0.5 0.5 0.66 0.8 0.66 0.8 0.5 0.5 0.23 0.23 0.5 0.5 0.23 0.23 Unit V V V-ns V-ns V-ns V-ns V V V-ns V-ns V V V-ns V-ns
Maximum amplitude Overshoot area
Volts (V)
VDD, VDDQ VSS, VSSQ
Undershoot area
Time (ns)
Overshoot/Undershoot Definition
Data Sheet E1045E20 (Ver. 2.0)
10
EBE11UE6ACSA
DC Characteristics 1 (TC = 0C to +85C, VDD = 1.8V 0.1V)
Parameter Symbol Grade -8E, -8G -6E -8E, -8G -6E -8E, -8G -6E -8E, -8G -6E max. 480 440 800 720 560 520 880 800 Unit mA Test condition one bank; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS min.(IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING one bank; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS min.(IDD); tRCD = tRCD (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W all banks idle; tCK = tCK (IDD); CKE is L; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING all banks idle; tCK = tCK (IDD); CKE is H, /CS is H; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING all banks idle; tCK = tCK (IDD); CKE is H, /CS is H; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING all banks open; Fast PDN Exit tCK = tCK (IDD); MRS(12) = 0 CKE is L; Other control and address bus inputs are STABLE; Slow PDN Exit Data bus inputs are MRS(12) = 1 FLOATING all banks open; tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD); CKE is H, /CS is H between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING all banks open, continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W all banks open, continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating current IDD0 (ACT-PRE) (Another rank is in IDD2P) Operating current IDD0 (ACT-PRE) (Another rank is in IDD3N) Operating current IDD1 (ACT-READ-PRE) (Another rank is in IDD2P) Operating current IDD1 (ACT-READ-PRE) (Another rank is in IDD3N) Precharge power-down standby current
mA
mA
mA
IDD2P
80
mA
Precharge quiet standby current
IDD2Q
-8E, -8G -6E
280 240
mA
Idle standby current
IDD2N
-8E, -8G -6E
320 280
mA
IDD3P-F Active power-down standby current IDD3P-S
280
mA
160
mA
Active standby current
IDD3N
-8E, -8G -6E
720 640
mA
Operating current IDD4R (Burst read operating) (Another rank is in IDD2P) Operating current IDD4R (Burst read operating) (Another rank is in IDD3N) Operating current IDD4W (Burst write operating) (Another rank is in IDD2P) Operating current IDD4W (Burst write operating) (Another rank is in IDD3N)
-8E, -8G -6E -8E, -8G -6E -8E, -8G -6E -8E, -8G -6E
840 740 1160 1020 840 740 1160 1020
mA
mA
mA
mA
Data Sheet E1045E20 (Ver. 2.0)
11
EBE11UE6ACSA
Parameter
Symbol
Grade -8E, -8G -6E -8E, -8G -6E
max. 1200 1160 1520 1440
Unit mA
Test condition tCK = tCK (IDD); Refresh command at every tRFC (IDD) interval; CKE is H, /CS is H between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Self Refresh Mode; CK and /CK at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING all bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD (IDD) -1 x tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD), tFAW = tFAW (IDD), tRCD = 1 x tCK (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4W;
Auto-refresh current IDD5 (Another rank is in IDD2P) Auto-refresh current IDD5 (Another rank is in IDD3N)
mA
Self-refresh current
IDD6
80
mA
Operating current IDD7 (Bank interleaving) (Another rank is in IDD2P) Operating current IDD7 (Bank interleaving) (Another rank is in IDD3N)
-8E, -8G -6E -8E, -8G -6E
1440 1280 1760 1560
mA
mA
Notes: 1. 2. 3. 4.
IDD specifications are tested after the device is properly initialized. Input slew rate is specified by AC Input Test Condition. IDD parameters are specified with ODT disabled. Data bus consists of DQ, DM, DQS, /DQS, RDQS and /RDQS. IDD values must be met with all combinations of EMRS bits 10 and 11. 5. Definitions for IDD L is defined as VIN VIL (AC) (max.) H is defined as VIN VIH (AC) (min.) STABLE is defined as inputs stable at an H or L level FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as: inputs changing between H and L every other clock cycle (once per two clocks) for address and control signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals not including masks or strobes. 6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions For purposes of IDD testing, the following parameters are to be utilized.
DDR2-800 Parameter CL (IDD) tRCD (IDD) tRC (IDD) tRRD (IDD) tFAW (IDD) tCK (IDD) tRAS (min.)(IDD) tRAS (max.)(IDD) tRP (IDD) tRFC (IDD) 5-5-5 5 12.5 57.5 10 45 2.5 45 70000 12.5 127.5 DDR2-800 6-6-6 6 15 60 10 45 2.5 45 70000 15 127.5 DDR2-667 5-5-5 5 15 60 10 50 3 45 70000 15 127.5 Unit tCK ns ns ns ns ns ns ns ns ns
Data Sheet E1045E20 (Ver. 2.0)
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DC Characteristics 2 (TC = 0C to +85C, VDD, VDDQ = 1.8V 0.1V) (DDR2 SDRAM Component Specification)
Parameter Input leakage current Output leakage current Symbol ILI ILO Value 2 5 VTT + 0.603 VTT - 0.603 0.5 x VDDQ +13.4 -13.4 Unit A A V V V mA mA Notes VDD VIN VSS VDDQ VOUT VSS 5 5 1 3, 4, 5 2, 4, 5
Minimum required output pull-up under AC VOH test load Maximum required output pull-down under VOL AC test load Output timing measurement reference level VOTR Output minimum sink DC current Output minimum source DC current IOL IOH
Notes: 1. 2. 3. 4. 5.
The VDDQ of the device under test is referenced. VDDQ = 1.7V; VOUT = 1.42V. VDDQ = 1.7V; VOUT = 0.28V. The DC value of VREF applied to the receiving device is expected to be set to VTT. After OCD calibration to 18 at TC = 25C, VDD = VDDQ = 1.8V.
DC Characteristics 3 (TC = 0C to +85C, VDD, VDDQ = 1.8V 0.1V) (DDR2 SDRAM Component Specification)
Parameter AC differential input voltage AC differential cross point voltage AC differential cross point voltage Symbol VID (AC) VIX (AC) VOX (AC) min. 0.5 0.5 x VDDQ - 0.175 0.5 x VDDQ - 0.125 max. VDDQ + 0.6 0.5 x VDDQ + 0.175 0.5 x VDDQ + 0.125 Unit V V V Notes 1, 2 2 3
Notes: 1. VID (AC) specifies the input differential voltage |VTR -VCP| required for switching, where VTR is the true input signal (such as CK, DQS, RDQS) and VCP is the complementary input signal (such as /CK, /DQS, /RDQS). The minimum value is equal to VIH (AC) - VIL (AC). 2. The typical value of VIX (AC) is expected to be about 0.5 x VDDQ of the transmitting device and VIX (AC) is expected to track variations in VDDQ. VIX (AC) indicates the voltage at which differential input signals must cross. 3. The typical value of VOX (AC) is expected to be about 0.5 x VDDQ of the transmitting device and VOX (AC) is expected to track variations in VDDQ. VOX (AC) indicates the voltage at which differential output signals must cross.
VDDQ VTR
VID
VCP VSSQ
Crossing point
VIX or VOX
Differential Signal Levels*1, 2
Data Sheet E1045E20 (Ver. 2.0)
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ODT DC Electrical Characteristics (TC = 0C to +85C, VDD, VDDQ = 1.8V 0.1V) (DDR2 SDRAM Component Specification)
Parameter Rtt effective impedance value for EMRS (A6, A2) = 0, 1; 75 Rtt effective impedance value for EMRS (A6, A2) = 1, 0; 150 Rtt effective impedance value for EMRS (A6, A2) = 1, 1; 50 Deviation of VM with respect to VDDQ/2 Symbol Rtt1 (eff) Rtt2 (eff) Rtt3 (eff) VM min. 60 120 40 -6 typ. 75 150 50 max. 90 180 60 +6 Unit % Note 1 1 1 1
Note: 1. Test condition for Rtt measurements. Measurement Definition for Rtt (eff) Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively. VIH(AC), and VDDQ values defined in SSTL_18.
Rtt (eff ) =
VIH ( AC ) - VIL( AC ) I (VIH ( AC )) - I (VIL( AC ))
Measurement Definition for VM Measure voltage (VM) at test pin (midpoint) with no load.
2 x VM - 1 x 100 VM = VDDQ
OCD Default Characteristics (TC = 0C to +85C, VDD, VDDQ = 1.8V 0.1V) (DDR2 SDRAM Component Specification)
Parameter Output impedance Pull-up and pull-down mismatch Output slew rate min. 12.6 0 1.5 typ. 18 max. 23.4 4 5 Unit V/ns Notes 1, 5 1, 2 3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/IOH must be less than 23.4 for values of VOUT between VDDQ and VDDQ-280mV. Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV; VOUT/IOL must be less than 23.4 for values of VOUT between 0V and 280mV. 2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and voltage. 3. Slew rate measured from VIL(AC) to VIH(AC). 4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by design and characterization. 5. DRAM I/O specifications for timing, voltage, and slew rate are no longer applicable if OCD is changed from default settings.
Data Sheet E1045E20 (Ver. 2.0)
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Pin Capacitance (TA = 25C, VDD = 1.8V 0.1V) (DDR2 SDRAM Component Specification)
Parameter Input capacitance -8E, -8G -6E Input capacitance -8E, -8G -6E Input capacitance Input capacitance Data and DQS input/output capacitance CI3 CI4 CO CK, /CK DM DQ, DQS, /DQS CI2 Symbol CI1 Pins Address, /RAS, /CAS, /WE, min. 1.0 1.0 1.0 1.0 1.0 2.5 2.5 max. 1.75 2.0 1.75 2.0 2.0 3.5 3.5 Unit pF pF pF pF pF pF pF Notes 1 1 1 1 1 2 2
/CS, CKE, ODT
Notes: 1 2
Matching within 0.25pF. Matching within 0.50pF.
Data Sheet E1045E20 (Ver. 2.0)
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AC Characteristics (TC = 0C to +85C, VDD, VDDQ = 1.8V 0.1V, VSS, VSSQ = 0V) (DDR2 SDRAM Component Specification) * New units tCK(avg) and nCK, are introduced in DDR2-800 and DDR2-667 tCK(avg): actual tCK(avg) of the input clock under operation. nCK: one clock cycle of the input clock, counting the actual clock edges.
-8E Speed bin Parameter Active to read or write command delay Precharge command period Active to active/auto-refresh command time DQ output access time from CK, /CK DQS output access time from CK, /CK CK high-level width CK low-level width CK half period Clock cycle time (CL = 6) (CL = 5) (CL = 4) (CL = 3) DQ and DM input hold time DQ and DM input setup time Control and Address input pulse width for each input DQ and DM input pulse width for each input Data-out high-impedance time from CK,/CK DQS, /DQS low-impedance time from CK,/CK DQ low-impedance time from CK,/CK DQS-DQ skew for DQS and associated DQ signals DQ hold skew factor DQ/DQS output hold time from DQS DQS latching rising transitions to associated clock edges DQS input high pulse width DQS input low pulse width Symbol tRCD tRP tRC tAC tDQSCK DDR2-800 (5-5-5) min. 12.5 12.5 57.5 -400 -350 max. +400 +350 0.52 0.52 -8G DDR2-800 (6-6-6) min. 15 15 60 -400 -350 0.48 0.48 max. +400 +350 0.52 0.52 -6E DDR2-667 (5-5-5) min. 15 15 60 -450 -400 0.48 0.48 max. +450 +400 0.52 0.52 Unit Notes ns ns ns ps ps 10 10
tCH (avg) 0.48 tCL(avg) tHP 0.48
tCK 13 (avg) tCK 13 (avg) ps ps ps ps ps ps ps tCK (avg) tCK (avg) 10 10 10 6, 13 13 13 13 13 5 4
Min. (tCL(abs), tCH(abs)) 8000 8000 8000 8000
Min. (tCL(abs), tCH(abs)) 2500 3000 3750 5000 125 50 0.6 0.35 8000 8000 8000 8000
Min. (tCL(abs), tCH(abs)) 3000 3000 3750 5000 175 100 0.6 0.35 8000 8000 8000 8000
tCK (avg) 2500 tCK (avg) 2500 tCK (avg) 3750 tCK (avg) 5000 tDH (base) tDS (base) tIPW tDIPW tHZ tLZ (DQS) tLZ (DQ) tDQSQ tQHS tQH tDQSS tDQSH tDQSL 125 50 0.6 0.35 tAC min.
tAC max. tAC max. tAC min.
tAC max. tAC max. tAC min.
tAC max. ps tAC max. ps
2 2 2 tAC max. ps tAC max. tAC max. x tAC min. x tAC min. x tAC min. tHP - tQHS -0.25 0.35 0.35 0.2 200 300 +0.25 tHP - tQHS -0.25 0.35 0.35 0.2 200 300 +0.25 tHP - tQHS -0.25 0.35 0.35 0.2 240 340 +0.25 ps ps ps tCK (avg) tCK (avg) tCK (avg) tCK (avg)
7 8
DQS falling edge to CK setup time tDSS
Data Sheet E1045E20 (Ver. 2.0)
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-8E Speed bin Parameter DQS falling edge hold time from CK Mode register set command cycle time Write postamble Write preamble Symbol tDSH tMRD tWPST tWPRE DDR2-800 (5-5-5) min. 0.2 2 0.4 0.35 max. 0.6 1.1 0.6 70000 -8G DDR2-800 (6-6-6) min. 0.2 2 0.4 0.35 250 175 0.9 0.4 45 max. 0.6 1.1 0.6 70000 -6E DDR2-667 (5-5-5) min. 0.2 2 0.4 0.35 275 200 0.9 0.4 45 max. 0.6 1.1 0.6 70000 Unit Notes tCK (avg) nCK tCK (avg) tCK (avg) ps ps 5 4
Address and control input hold time tIH (base) 250 Address and control input setup time Read preamble Read postamble Active to precharge command Active to auto-precharge delay Active bank A to active bank B command period Four active window period /CAS to /CAS command delay Write recovery time Auto precharge write recovery + precharge time Internal write to read command delay Internal read to precharge command delay Exit self-refresh to a non-read command Exit self-refresh to a read command Exit precharge power down to any non-read command Exit active power down to read command Exit active power down to read command (slow exit/low power mode) CKE minimum pulse width (high and low pulse width) tIS (base) 175 tRPRE tRPST tRAS tRAP tRRD tFAW tCCD tWR tDAL tWTR tRTP tXSNR tXSRD tXP tXARD tXARDS tCKE 0.9 0.4 45
tCK 11 (avg) tCK 12 (avg) ns ns ns ns nCK ns nCK 1, 9 ns ns ns nCK nCK nCK 3 nCK 2, 3 nCK ns ns ns s s ns
tRCD min. 10 45 2 15
tRCD min. 10 45 2 15
tRCD min. 10 50 2 15
WR + RU (tRP/ tCK (avg)) 7.5 7.5
WR + RU (tRP/ tCK (avg)) 7.5 7.5
WR + RU (tRP/ tCK (avg)) 7.5 7.5
tRFC + 10 200 2 2 8 - AL 3 0 0 127.5 tIS + tCK(avg) + tIH 12 12 7.8 3.9
tRFC + 10 200 2 2 8 - AL 3 0 0 127.5 tIS + tCK(avg) + tIH 12 12 7.8 3.9
tRFC + 10 200 2 2 7 - AL 3 0 0 127.5 tIS + tCK(avg) + tIH 12 12 7.8 3.9
Output impedance test driver delay tOIT MRS command to ODT update tMOD delay Auto-refresh to active/auto-refresh tRFC command time Average periodic refresh interval tREFI (0C TC +85C) (+85C < TC +95C) Minimum time clocks remains ON after CKE asynchronously drops low tREFI tDELAY
Data Sheet E1045E20 (Ver. 2.0)
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Notes: 1. 2. 3. 4. For each of the terms above, if not already an integer, round to the next higher integer. AL: Additive Latency. MRS A12 bit defines which active power down exit timing to be applied. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test. 5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the device under test.
DQS /DQS
CK /CK
tDS
tDH
tDS
tDH VDDQ VIH (AC)(min.) VIH (DC)(min.) VREF VIL (DC)(max.) VIL (AC)(max.) VSS
tIS
tIH
tIS
tIH VDDQ VIH (AC)(min.) VIH (DC)(min.) VREF VIL (DC)(max.) VIL (AC)(max.) VSS
Input Waveform Timing 1 (tDS, tDH)
Input Waveform Timing 2 (tIS, tIH)
6.tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter. It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the following equation; tHP = min ( tCH(abs), tCL(abs) ), where, tCH(abs) is the minimum of the actual instantaneous clock high time; tCL(abs) is the minimum of the actual instantaneous clock low time; 7. tQHS accounts for: a. The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is transferred to the output; and b. The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are independent of each other, due to data pin skew, output pattern effects, and p-channel to n-channel variation of the output drivers. 8. tQH = tHP - tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.} Examples: a. If the system provides tHP of 1315ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975ps (min.) b. If the system provides tHP of 1420ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080ps (min.) 9. RU stands for round up. WR refers to the tWR parameter stored in the MRS. 10. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per) min. = -272ps and tERR(6-10per) max. = +293ps, then tDQSCK min.(derated) = tDQSCK min. - tERR(6-10per) max. = -400ps - 293ps = -693ps and tDQSCK max.(derated) = tDQSCK max. - tERR(6-10per) min. = 400ps + 272ps = +672ps. Similarly, tLZ(DQ) for DDR2-667 derates to tLZ(DQ) min.(derated) = -900ps - 293ps = -1193ps and tLZ(DQ) max.(derated)= 450ps + 272ps = +722ps. 11. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per) of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per) min. = -72ps and tJIT(per) max. = +93ps, then tRPRE min.(derated) = tRPRE min. + tJIT(per) min. = 0.9 x tCK(avg) - 72ps = +2178ps and tRPRE max.(derated) = tRPRE max. + tJIT(per) max. = 1.1 x tCK(avg) + 93ps = +2843ps.
Data Sheet E1045E20 (Ver. 2.0)
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12. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(duty) of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty) min. = -72ps and tJIT(duty) max. = +93ps, then tRPST min.(derated) = tRPST min. + tJIT(duty) min. = 0.4 x tCK(avg) - 72ps = +928ps and tRPST max.(derated) = tRPST max. + tJIT(duty) max. = 0.6 x tCK(avg) + 93ps = +1592ps. 13. Refer to the Clock Jitter table.
ODT AC Electrical Characteristics (DDR2 SDRAM Component Specification)
Parameter ODT turn-on delay ODT turn-on ODT turn-on (power down mode) ODT turn-off delay ODT turn-off ODT turn-off (power down mode) ODT to power down entry latency ODT power down exit latency Symbol tAOND tAON tAONPD tAOFD tAOF tAOFPD tANPD tAXPD min. 2 tAC (min) tAC(min) + 2000 2.5 tAC(min) tAC(min) + 2000 3 8 max. 2 tAC (max) + 700 2tCK + tAC(max) + 1000 2.5 tAC(max) + 600 2.5tCK + tAC(max) + 1000 3 8 Unit tCK ps ps tCK ps ps tCK tCK 5 2, 4, 5 1, 3 Notes
Notes: 1. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND. 2. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD. 3. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output deratings are relative to the SDRAM input clock.) 4. When the device is operated with input clock jitter, this parameter needs to be derated by {-tJIT(duty) max. - tERR(6-10per) max. } and { -tJIT(duty) min. - tERR(6-10per) min. } of the actual input clock.(output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per) min. = -272ps, tERR(6-10per) max. = +293ps, tJIT(duty) min. = -106ps and tJIT(duty) max. = +94ps, then tAOF min.(derated) = tAOF min. + { -tJIT(duty) max. - tERR(6-10per) max. } = -450ps + { -94ps - 293ps} = -837ps and tAOF max.(derated) = tAOF max. + { -tJIT(duty) min. - tERR(6-10per) min. } = 1050ps + { 106ps + 272ps} = +1428ps. 5. For tAOFD of DDR2-667/800, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH(avg), average input clock high pulse width of 0.5 relative to tCK(avg). tAOF min. and tAOF max. should each be derated by the same amount as the actual amount of tCH(avg) offset present at the DRAM input with respect to 0.5. For example, if an input clock has a worst case tCH(avg) of 0.48, the tAOF min. should be derated by subtracting 0.02 x tCK(avg) from it, whereas if an input clock has a worst case tCH(avg) of 0.52, the tAOF max. should be derated by adding 0.02 x tCK(avg) to it. Therefore, we have; tAOF min.(derated) = tAC min. - [0.5 - Min.(0.5, tCH(avg) min.)] x tCK(avg) tAOF max.(derated) = tAC max. + 0.6 + [Max.(0.5, tCH(avg) max.) - 0.5] x tCK(avg) or tAOF min.(derated) = Min.(tAC min., tAC min. - [0.5 - tCH(avg) min.] x tCK(avg)) tAOF max.(derated) = 0.6 + Max.(tAC max., tAC max. + [tCH(avg) max. - 0.5] x tCK(avg)) where tCH(avg) min. and tCH(avg) max. are the minimum and maximum of tCH(avg) actually measured at the DRAM input balls.
Data Sheet E1045E20 (Ver. 2.0)
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AC Input Test Conditions (DDR2 SDRAM Component Specification)
Parameter Input reference voltage Input signal maximum peak to peak swing Input signal minimum slew rate Symbol VREF VSWING (max.) SLEW Value 0.5 x VDDQ 1.0 1.0 Unit V V V/ns Notes 1 1 2, 3
Notes: 1. Input waveform timing is referenced to the input signal crossing through the VIH/IL (AC) level applied to the device under test. 2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH (AC) (min.) for rising edges and the range from VREF to VIL (AC) (max.) for falling edges as shown in the below figure. 3. AC timings are referenced with input waveforms switching from VIL (AC) to VIH (AC) on the positive transitions and VIH (AC) to VIL (AC) on the negative transitions.
VDDQ VIH (AC)(min.) VIH (DC)(min.)
VSWING(max.)
VREF VIL (DC)(max.) VIL (AC)(max.)
TF Falling slew = VREF
TR
Rising slew =
VSS
VIH (AC) min. - VREF TR
- VIL (AC)(max.)
TF
AC Input Test Signal Wave forms
Measurement point
DQ RT =25
VTT
Output Load
Data Sheet E1045E20 (Ver. 2.0)
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Clock Jitter [DDR2-800, 667]
-8E, -8G Frequency (Mbps) Parameter Average clock period Clock period jitter Clock period jitter during DLL locking period Cycle to cycle period jitter Cycle to cycle clock period jitter during DLL locking period Cumulative error across 2 cycles Cumulative error across 3 cycles Cumulative error across 4 cycles Cumulative error across 5 cycles Cumulative error across n=6,7,8,9,10 cycles Cumulative error across n=11, 12,...49,50 cycles Average high pulse width Average low pulse width Duty cycle jitter Symbol tCK (avg) tJIT (per) tJIT (per, lck) tJIT (cc) 800 min. 2500 -100 -80 max. 8000 100 80 200 160 150 175 200 200 300 450 0.52 0.52 100 -6E 667 min. 3000 -125 -100 -175 -225 -250 -250 -350 -450 0.48 0.48 -125 max. 8000 125 100 250 200 175 225 250 250 350 450 0.52 0.52 125 Unit ps ps ps ps ps ps ps ps ps ps ps tCK (avg) tCK (avg) ps Notes 1 5 5 6 6 7 7 7 7 7 7 2 3 4
tJIT (cc, lck) tERR (2per) -150 tERR (3per) -175 tERR (4per) -200 tERR (5per) -200 tERR (6-10per) tERR (11-50per) tCH (avg) tCL (avg) tJIT (duty) -300 -450 0.48 0.48 -100
Notes: 1. tCK (avg) is calculated as the average clock period across any consecutive 200cycle window.
N tCK (avg ) = tCKj N j =1
N = 200 2. tCH (avg) is defined as the average high pulse width, as calculated across any consecutive 200 high pulses.
N tCH (avg ) = tCHj (N x tCK (avg )) j =1
N = 200 3. tCL (avg) is defined as the average low pulse width, as calculated across any consecutive 200 low pulses.
N tCL(avg ) = tCLj (N x tCK (avg )) j =1
N = 200 4. tJIT (duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from tCH (avg). tCL jitter is the largest deviation of any single tCL from tCL (avg). tJIT (duty) is not subject to production test. tJIT (duty) = Min./Max. of {tJIT (CH), tJIT (CL)}, where: tJIT (CH) = {tCHj- tCH (avg) where j = 1 to 200} tJIT (CL) = {tCLj - tCL (avg) where j = 1 to 200} 5. tJIT (per) is defined as the largest deviation of any single tCK from tCK (avg). tJIT (per) = Min./Max. of { tCKj - tCK (avg) where j = 1 to 200} tJIT (per) defines the single period jitter when the DLL is already locked. tJIT (per, lck) uses the same definition for single period jitter, during the DLL locking period only. tJIT (per) and tJIT (per, lck) are not subject to production test.
Data Sheet E1045E20 (Ver. 2.0)
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6. tJIT (cc) is defined as the absolute difference in clock period between two consecutive clock cycles: tJIT (cc) = Max. of |tCKj+1 - tCKj| tJIT (cc) is defines the cycle to cycle jitter when the DLL is already locked. tJIT (cc, lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only. tJIT (cc) and tJIT (cc, lck) are not subject to production test. 7. tERR (nper) is defined as the cumulative error across multiple consecutive cycles from tCK (avg). tERR (nper) is not subject to production test.
n tERR(nper ) = tCKj - n x tCK(avg )) j =1
2 n 50 for tERR (nper) 8. These parameters are specified per their average values, however it is understood that the following relationship between the average timing and the absolute instantaneous timing hold at all times. (minimum and maximum of spec values are to be used for calculations in the table below.)
Parameter Absolute clock period Absolute clock high pulse width Absolute clock low pulse width Symbol tCK (abs) tCH (abs) tCL (abs) min. tCK (avg) min. + tJIT (per) min. tCH (avg) min. x tCK (avg) min. + tJIT (duty) min. tCL (avg) min. x tCK (avg) min. + tJIT (duty) min. max. Unit tCK (avg) max. + tJIT (per) max. ps tCH (avg) max. x tCK (avg) max. ps + tJIT (duty) max. tCL (avg) max. x tCK (avg) max. ps + tJIT (duty) max.
Example: For DDR2-667, tCH(abs) min. = ( 0.48 x 3000 ps ) - 125ps = 1315ps
Data Sheet E1045E20 (Ver. 2.0)
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EBE11UE6ACSA
Pin Functions CK, /CK (input pin) The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and the VREF level. DQSs for write operation are referred to the cross point of the CK and the /CK. /CS (input pin) When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. /RAS, /CAS, and /WE (input pins) These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels. See "Command operation". A0 to A12 (input pins) Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the VREF level in a bank active command cycle. Column address (AY0 to AY9) is loaded via the A0 to the A9 at the cross point of the CK rising edge and the VREF level in a read or a write command cycle. This column address becomes the starting address of a burst operation. A10 (AP) (input pin) A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled. BA0, BA1, BA2 (input pin) BA0, BA1 and BA2 are bank select signals (BA). The memory array is divided into 8 banks: bank 0 to bank 7. (See Bank Select Signal Table) [Bank Select Signal Table]
BA0 Bank 0 Bank 1 Bank 2 Bank 3 Bank 4 Bank 5 Bank 6 Bank 7 L H L H L H L H BA1 L L H H L L H H BA2 L L L L H H H H
Remark: H: VIH. L: VIL.
Data Sheet E1045E20 (Ver. 2.0)
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EBE11UE6ACSA
CKE (input pin) CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the CKE is driven low and exited when it resumes to high. The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold time tIH. DQ (input and output pins) Data are input to and output from these pins. DQS and /DQS (input and output pin) DQS and /DQS provide the read data strobes (as output) and the write data strobes (as input). DM (input pins) DM is the reference signal of the data input mask function. DMs are sampled at the cross point of DQS and /DQS. VDD (power supply pins) 1.8V is applied. (VDD is for the internal circuit.) VDDSPD (power supply pin) 1.8V is applied (For serial EEPROM). VSS (power supply pin) Ground is connected.
Detailed Operation Part and Timing Waveforms
Refer to the EDE1104ACSE, EDE1108ACSE, EDE1116ACSE datasheet (E0975E).
Data Sheet E1045E20 (Ver. 2.0)
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EBE11UE6ACSA
Physical Outline
Unit: mm
Front side
2.00 Min
11.55
17.55
(DATUM -A-)
3.80 Max
4x Full R
4.00 Min
Component area (Front)
6.00
2.15
11.40
B
A
199
1
47.40
2.45
D
1.00 0.10
67.60
Back side
63.60
2.45
C
200
2.15
2
4.00
20.00
Component area (Back)
(DATUM -A-)
Detail A
0.60
2.55 Min
Detail B
FULL R
2.70
0.35 Max
4.20
4.00 0.10
1.00 0.10
0.45 0.03
Detail C
Detail D
Contact pad
4.20
0.2 Max 0.35 Max
2.40
ECA-TS2-0209-01
Data Sheet E1045E20 (Ver. 2.0)
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30.00
EBE11UE6ACSA
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. In particular, do not push module cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. When re-packing memory modules, be sure the modules are not touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules.
MDE0202
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function.
CME0107
Data Sheet E1045E20 (Ver. 2.0)
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EBE11UE6ACSA
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Be aware that this product is for use in typical electronic equipment for general-purpose applications. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] Usage in environments with special characteristics as listed below was not considered in the design. Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in environments with the special characteristics listed below. Example: 1) Usage in liquids, including water, oils, chemicals and organic solvents. 2) Usage in exposure to direct sunlight or the outdoors, or in dusty places. 3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL 2 , H 2 S, NH 3 , SO 2 , and NO x . 4) Usage in environments with static electricity, or strong electromagnetic waves or radiation. 5) Usage in places where dew forms. 6) Usage in environments with mechanical vibration, impact, or stress. 7) Usage near heating elements, igniters, or flammable items. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations.
M01E0706
Data Sheet E1045E20 (Ver. 2.0)
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